JPH0330296B2 - - Google Patents
Info
- Publication number
- JPH0330296B2 JPH0330296B2 JP56026790A JP2679081A JPH0330296B2 JP H0330296 B2 JPH0330296 B2 JP H0330296B2 JP 56026790 A JP56026790 A JP 56026790A JP 2679081 A JP2679081 A JP 2679081A JP H0330296 B2 JPH0330296 B2 JP H0330296B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- source
- thin film
- film transistor
- drain regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 19
- 238000001704 evaporation Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56026790A JPS57141961A (en) | 1981-02-27 | 1981-02-27 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56026790A JPS57141961A (en) | 1981-02-27 | 1981-02-27 | Thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57141961A JPS57141961A (en) | 1982-09-02 |
| JPH0330296B2 true JPH0330296B2 (en]) | 1991-04-26 |
Family
ID=12203103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56026790A Granted JPS57141961A (en) | 1981-02-27 | 1981-02-27 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57141961A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201800009452A1 (it) | 2018-10-15 | 2020-04-15 | Cannon Ergos Spa | Metodo ed apparato per l'avanzamento di articoli da termoformare |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4670763A (en) * | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
| JP2635542B2 (ja) * | 1984-12-25 | 1997-07-30 | 株式会社東芝 | 薄膜トランジスタ |
-
1981
- 1981-02-27 JP JP56026790A patent/JPS57141961A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201800009452A1 (it) | 2018-10-15 | 2020-04-15 | Cannon Ergos Spa | Metodo ed apparato per l'avanzamento di articoli da termoformare |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57141961A (en) | 1982-09-02 |
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